Since 2019 there have been demonstrations of ferroelectric III-Nitride semiconductors with potential to impact future electronic and photonic applications due to their extraordinary properties. However, the only epitaxial growth process that produces single crystal thin films has been molecular beam epitaxy [1-3] and these films have already shown tremendous potential.
The alloys primarily focused upon so far are centered around incorporating scandium (Sc) in the AlGaN system. The opportunity for other group IIIb based alloys such as Yttrium has also been shown and may have merit to improve certain properties of the ferroelectrics [4,5]. Although the Army has started a MURI program based upon this subject, the use of MOCVD is complementary to that effort and requires novel precursors to grow the thin films [6,7]. Such MOCVD thin films would constitute the most easily manufacturable solution for larger wafer scale processes [6,7].
Thus, the aim is to develop them in parallel to some basic research for easy technology transition. Four inch or larger wafers are quite common to MOCVD reactors but are not possible in research grade MBE systems. The material science innovative research and development from this topic can enable useful product development at manufacturing for ferroelectric III-Nitride devices. Examples of this include high operating temperature electronic memory, high temperature electronic circuits, and integrated nonlinear optical photonic circuits for UV-visible wavelengths.